HSBD440 Datasheet, PDF(1/1 Page) SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD

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HSBD440 Datasheet, PDF (1/1 Pages) SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD – PNP SILICON TRANSISTOR

Shantou Huashan Electronic Devices Co.,Ltd.

PNP S I L I C O N T R A N S I S T O R

HSBD440

APPLICATIONS

Medium Power Linear switching Applications

ABSOLUTE MAXIMUM RATINGS Ta=25

Tstg Storage Temperature

Tj Junction Temperature

PC Collector Dissipation Tc=25

VCBO Collector-Base Voltage

VCEO Collector-Emitter Voltage

VCES Collector-Emitter Voltage

VEBO Emitter-Base Voltage

IC Collector Current Pulse

IC Collector Current DC

IB Base Current

55~150

150

36W

-60V

-5V

-7A

- 4A

-1A

1 Emitter, E

2 Collector C

3 Base B

ELECTRICAL CHARACTERISTICS Ta=25

Symbol

Characteristics

Min Typ

ICBO Collector Cut-off Current

IEBO Emitter Cut-off Current

ICES Collector Cut-off Current

*HFE 1 DC Current Gain

*HFE 2 DC Current Gain

*HFE 3 DC Current Gain

*VCE(sat) Collector- Emitter Saturation Voltage

*VBE(on1) Base-Emitter On Voltage

*VBE(on2) Base-Emitter On Voltage

VCEO(sus) Collector-Emitter Sustaining Voltage

Current Gain-Bandwidth Product

Max Unit

Test Conditions

VCB=-60V, IE=0

VEB=-5V, IC=0

VCE=-60V, VEB=0

VCE=-5V, IC=-10mA

VCE=-1V, IC=-500mA

VCE=-1V, IC=-2A

IC=-2A, IB=-0.2A

VCE=-5V, IC=-10mA

VCE=-1V, IC=-2A

IC=-100mA, IB=0

VCE=-1V, IC=-250mA,