HSBD438 Datasheet, PDF (1/1 Pages) SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD – PNP SILICON TRANSISTOR

Shantou Huashan Electronic Devices Co.,Ltd.
PN P S I L I C O N T R A N S I S T O R
HSBD438
█ APPLICATIONS
Medium Power Linear switching Applications
█ ABSOLUTE MAXIMUM RATINGS（T_a=25℃）
T_stg——Storage Temperature………………………… -55~150℃
T_j——Junction Temperature……………………………… 150℃
P_C——Collector Dissipation（T_c=25℃）…………………… 36W
V_CBO——Collector-Base Voltage…………………………… -45V
V_CEO——Collector-Emitter Voltage………………………… -45V
V_CES——Collector-Emitter Voltage………………………… -45V
V_EBO——Emitter-Base Voltage………………………………… -5V
I_C——Collector Curren（t Pulse）………………………………… -7A
I_C——Collector Current（DC）………………………………… -4A
I_B——Base Current………………………………………………-1A
1―Emitter, E
2―Collector，C
3―Base，B
█ ELECTRICAL CHARACTERISTICS（T_a=25℃）
Symbol
Characteristics
Min
I_CBO Collector Cut-off Current
I_EBO Emitter-Base Cut-off Current
h_FE(1) DC Current Gain
30
*h_FE(2)
85
*h_FE(2)
40
*V_CE(sat) Collector-Emitter Saturation Voltage
*VBE(ON) Base-Emitter On Voltage
VCEO(SUS) Collector-Emitter Sustaining Voltage
-45
fT Current Gain-Bandwidth Product
3
* Pulse Test:PW=300μS,Duty Cycle=1.5% Pulsed
Typ
140
140
-0.2
Max
-100
-1
-0.6
-1.2
Unit
Test Conditions
μA _{VCB=-45V, IE=0}
mA _{VEB=-5V, IC=0}
VCE=-5V, IC=-10mA
VCE=-1V, IC=-500mA
VCE=-1V, IC=-2A
V Ic=-2A, IB=-0.2A
V Ic=-2A, VCE=-1V
Ic=-100mA,IB=0
MHz Ic=-250mA, VCE=-1V