HSBD437 Datasheet, PDF (1/1 Pages) SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD – NPN SILICON TRANSISTOR

Shantou Huashan Electronic Devices Co.,Ltd.
NPN S I L I C O N T R A N S I S T O R
HSBD437
█ APPLICATIONS
Medium Power Linear switching Applications
█ ABSOLUTE MAXIMUM RATINGS（T_a=25℃）
T_stg——Storage Temperature………………………… -55~150℃
T_j——Junction Temperature……………………………… 150℃
P_C——Collector Dissipation（T_c=25℃）…………………… 36W
V_CBO——Collector-Base Voltage…………………………… 45V
V_CEO——Collector-Emitter Voltage………………………… 45V
V_CES——Collector-Emitter Voltage………………………… 45V
V_EBO——Emitter-Base Voltage………………………………… 5V
I_C——Collector Current（Pulse）………………………………… 7A
I_C——Collector Curren（t DC）…………………………………… 4A
I_B——Base Current………………………………………………1A
1―Emitter, E
2―Collector，C
3―Base，B
█ ELECTRICAL CHARACTERISTICS（T_a=25℃）
Symbol
I_CBO
Characteristics
Collector Cut-off Current
Min Typ Max
100
I_EBO
h_FE(1)
*h_FE(2)
*h_FE(2)
*V_CE(sat)
*VBE(ON)
Emitter-Base Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
1
30 130
85 140
40
0.2 0.6
1.2
VCEO(SUS) Collector-Emitter Sustaining Voltage
45
fT Current Gain-Bandwidth Product
3
* Pulse Test:PW=300μS,Duty Cycle=1.5% Pulsed
Unit
Test Conditions
μA _{VCB=45V, IE=0}
mA _{VEB=5V, IC=0}
VCE=5V, IC=10mA
VCE=1V, IC=500mA
VCE=1V, IC=2A
V Ic=2A, IB=0.2A
V Ic=2A, VCE=1V
Ic=100mA,IB=0
MHz Ic=250mA, VCE=1V