HSBD436 Datasheet, PDF (1/1 Pages) SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD – PNP SILICON TRANSISTOR

Shantou Huashan Electronic Devices Co.,Ltd.
PNP S I L I C O N T R A N S I S T O R
HSBD436
█ APPLICATIONS
Medium Power Linear switching Applications
█ ABSOLUTE MAXIMUM RATINGS（T_a=25℃）
T_stg——Storage Temperature………………………… -55~150℃
T_j——Junction Temperature……………………………… 150℃
P_C——Collector Dissipation（T_c=25℃）…………………… 36W
V_CBO——Collector-Base Voltage…………………………… -32V
V_CEO——Collector-Emitter Voltage………………………… -32V
V_CES——Collector-Emitter Voltage………………………… -32V
V_EBO——Emitter-Base Voltage………………………………… -5V
I_C——Collector Curren（t Pulse）………………………………… -7A
I_C——Collector Current（DC）………………………………… -4A
I_B——Base Current………………………………………………-1A
1―Emitter, E
2―Collector，C
3―Base，B
█ ELECTRICAL CHARACTERISTICS（T_a=25℃）
Symbol
Characteristics
ICBO Collector Cut-off Current
IEBO Emitter Cut-off Current
*HFE（1） DC Current Gain
*HFE（2） DC Current Gain
*HFE（3） DC Current Gain
*VCE(sat) Collector- Emitter Saturation Voltage
*VBE(on) Base-Emitter On Voltage
VCEO(sus) Collector-Emitter Sustaining Voltage
ft
Current Gain-Bandwidth Product
* Pulse Test:PW=300μS,Duty Cycle=1.5% Pulsed
Min Typ Max Unit
Test Conditions
-100 μA V_CB=-32V, I_E=0
-1 mA V_EB=-5V, I_C=0
40 140
V_CE=-5V, I_C=-10mA
85 140
V_CE=-1V, I_C=-500mA
50
V_CE=-1V, I_C=-2A
-0.2 -0.5 V I_C=-2A, I_B=-0.2A
-1.1 V V_CE=-1V, I_C=-2A
-32
V I_C=-100mA, I_B=0
3
MHz V_CE=-1V, I_C=-250mA,