HSBD435 Datasheet, PDF (1/1 Pages) SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD – NPN SILICON TRANSISTOR

Shantou Huashan Electronic Devices Co.,Ltd.
NPN S I L I C O N T R A N S I S T O R
HSBD435
█ APPLICATIONS
Medium Power Linear switching Applications
█ ABSOLUTE MAXIMUM RATINGS（T_a=25℃）
T_stg——Storage Temperature………………………… -55~150℃
T_j——Junction Temperature……………………………… 150℃
P_C——Collector Dissipation（T_c=25℃）…………………… 36W
V_CBO——Collector-Base Voltage…………………………… 32V
V_CEO——Collector-Emitter Voltage………………………… 32V
V_CES——Collector-Emitter Voltage………………………… 32V
V_EBO——Emitter-Base Voltage………………………………… 5V
I_C——Collector Current（Pulse）………………………………… 7A
I_C——Collector Curren（t DC）…………………………………… 4A
I_B——Base Current………………………………………………1A
1―Emitter, E
2―Collector，C
3―Base，B
█ ELECTRICAL CHARACTERISTICS（T_a=25℃）
Symbol
Characteristics
Min Typ Max Unit
Test Conditions
ICBO Collector Cut-off Current
100 μA V_CB=32V, I_E=0
IEBO Emitter Cut-off Current
1 mA V_EB=5V, I_C=0
*HFE（1） DC Current Gain
40 130
V_CE=5V, I_C=10mA
*HFE（2） DC Current Gain
85 140
V_CE=1V, I_C=500mA
*HFE（3） DC Current Gain
50
V_CE=1V, I_C=2A
*VCE(sat) Collector- Emitter Saturation Voltage
0.2 0.5 V I_C=2A, I_B=0.2A
*VBE(on) Base-Emitter On Voltage
1.1 V V_CE=1V, I_C=2A
VCEO(sus) Collector-Emitter Sustaining Voltage 32
V I_C=100mA, I_B=0
ft
Current Gain-Bandwidth Product
3
MHz V_CE=1V, I_C=250mA,
* Pulse Test:PW=300μS,Duty Cycle=1.5% Pulsed