HSBD380 Datasheet, PDF (1/1 Pages) SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD – PNP SILICON TRANSISTOR

Shantou Huashan Electronic Devices Co.,Ltd.
PNP S I L I C O N T R A N S I S T O R
HSBD380
APPLICATIONS
Medium Power Linear switching Applications
ABSOLUTE MAXIMUM RATINGS T_a=25
T_stg Storage Temperature
T_j Junction Temperature
P_C Collector Dissipation T_c=25
V_CBO Collector-Base Voltage
V_CEO Collector-Emitter Voltage
V_EBO Emitter-Base Voltage
I_C Collector Current Pulse
I_C Collector Current DC
Ib Base Current
55~150
150
25W
-100V
-80V
-5V
-3A
-2A
-1A
1 Emitter, E
2 Collector C
3 Base B
ELECTRICAL CHARACTERISTICS T_a=25
Symbol
Characteristics
Min Typ Max Unit
Test Conditions
ICBO
IEBO
*HFE 1
*HFE 2
*VCE(sat)
*VBE(on)
VCEO(sus)
BVCBO
tON
tOFF
*
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
DC Current Gain
Collector- Emitter Saturation Voltage
Base-Emitter On Voltage
Collector-Emitter Sustaining Voltage
Collector-Base Breakdown Voltage
Turn-On Time
Turn-Off Time
V_CB=-80V, I_E=0
V_EB=-5V, I_C=0
V_CE=-2V, I_C=-150mA
V_CE=-2V, I_C=-1A
I_C=-1A, I_B=-0.1A
V_CE=-2V, I_C=-1A
I_C=-100mA, I_B=0
I_C=-100 A, I_E=0
V_CC=-30V, I_C=-0.5A
I_B1=-I_B2=-0.05A
h_FE(3) Classification
Cassification
6
10
16
25
h_FE(3)
40~100
63~160
100~250
150~375