HSBD375 Datasheet, PDF(1/1 Page) SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD

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HSBD375 Datasheet, PDF (1/1 Pages) SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD – NPN SILICON TRANSISTOR

Shantou Huashan Electronic Devices Co.,Ltd.

NPN S I L I C O N T R A N S I S T O R

HSBD375

Medium Power Linear switching Applications

ABSOLUTE MAXIMUM RATINGS Ta=25

Tstg Storage Temperature

Tj Junction Temperature

PC Collector Dissipation Tc=25

VCBO Collector-Base Voltage

VCEO Collector-Emitter Voltage

VEBO Emitter- Base Voltage

IC Collector Current Pulse

IC Collector Current DC

Ib Base Current

55~150

150

25W

50V

45V

1 Emitter, E

2 Collector C

3 Base B

ELECTRICAL CHARACTERISTICS Ta=25

Symbol

Characteristics

Min Typ Max Unit

Test Conditions

ICBO

IEBO

*HFE 1

*HFE 2

*VCE(sat)

*VBE(on)

VCEO(sus)

BVCBO

tON

tOFF

Collector Cut-off Current

Emitter Cut-off Current

DC Current Gain

Collector- Emitter Saturation Voltage

Base-Emitter On Voltage

Collector-Emitter Sustaining Voltage

Collector-Base Breakdown Voltage

Turn-On Time

Turn-Off Time

VCB=45V, IE=0

VEB=5V, IC=0

VCE=2V, IC=150mA

VCE=2V, IC=1A

IC=1A, IB=0.1A

VCE=2V, IC=1A

IC=100mA, IB=0

IC=100 A, IE=0

VCC=30V, IC=0.5A

IB1=-IB2=0.05A

hFE(3) Classification

Cassification

hFE(3)

40~100

63~160

100~250

150~375