HSBD238 Datasheet, PDF (1/2 Pages) SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD – PNP SILICON TRANSISTOR

Shantou Huashan Electronic Devices Co.,Ltd.
PNP SILICON TRANSIST OR
HSBD238
APPLICATIONS
Medium Power Linear switching Applications
ABSOLUTE MAXIMUM RATINGS T_a=25
T_stg Storage Temperature
T_j Junction Temperature
P_C Collector Dissipation T_c=25
V_CBO Collector-Base Voltage
V_CEO Collector-Emitter Voltage
V_CER Collector-Emitter Voltage
V_EBO Emitter-Base Voltage
I_C Collector Current Pulse
I_C Collector Current DC
-55~150
150
25W
100V
-80V
-100V
-5V
-6A
-2A
1 Emitter, E
2 Collector C
3 Base B
ELECTRICAL CHARACTERISTICS T_a=25
Symbol
Characteristics
Min Typ
I_CBO Collector Cut-off Current
I_EBO Emitter-Base Cut-off Current
h_FE(1) DC Current Gain
40
*h_FE(2)
25
*V_CE(sat) Collector-Emitter Saturation Voltage
*VBE(ON) Base-Emitter On Voltage
VCEO(SUS) Collector-Emitter Sustaining Voltage
-80
fT Current Gain-Bandwidth Product
3
* Pulse Test:PW=350 S,Duty Cycle 1.5% Pulsed
Max
-100
-1
-0.6
-1.3
Unit
Test Conditions
A _{VCB=-100V, IE=0}
mA _{VEB=-5V, IC=0}
VCE=-2V, IC=-150mA
VCE=-2V, IC=-1A
V Ic=-1A, IB=-0.1A
V Ic=-1A, VCE=-2V
Ic=-100mA,IB=0
MHz Ic=-250mA, VCE=-10V