HSBD237 Datasheet, PDF (1/1 Pages) SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD – NPN SILICON TRANSISTOR

Shantou Huashan Electronic Devices Co.,Ltd.
NPN S I L I C O N T R A N S I S T O R
HSBD237
█ APPLICATIONS
Medium Power Linear switching Applications
█ ABSOLUTE MAXIMUM RATINGS（T_a=25℃）
T_stg——Storage Temperature………………………… -55~150℃
T_j——Junction Temperature……………………………… 150℃
P_C——Collector Dissipation（T_c=25℃）…………………… 25W
V_CBO——Collector-Base Voltage…………………………… 100V
V_CEO——Collector-Emitter Voltage………………………… 80V
V_CER——Collector-Emitter Voltage………………………… 100V
V_EBO——Emitter-Base Voltage………………………………… 5V
I_C——Collector Current（Pulse）………………………………… 6A
I_C——Collector Current（DC）……………………………… 2A
1―Emitter, E
2―Collector，C
3―Base，B
█ ELECTRICAL CHARACTERISTICS（T_a=25℃）
Symbol
I_CBO
Characteristics
Collector Cut-off Current
Min Typ Max
100
I_EBO Emitter-Base Cut-off Current
1
h_FE(1) DC Current Gain
40
*h_FE(2)
25
*V_CE(sat) Collector-Emitter Saturation Voltage
0.6
*VBE(ON) Base-Emitter On Voltage
1.3
VCEO(SUS) Collector-Emitter Sustaining Voltage
80
fT Current Gain-Bandwidth Product
3
* Pulse Test:PW=350μS,Duty Cycle≤1.5% Pulsed
Unit
Test Conditions
μA _{VCB=100V, IE=0}
mA _{VEB=5V, IC=0}
VCE=2V, IC=150mA
VCE=2V, IC=1A
V Ic=1A, IB=0.1A
V Ic=1A, VCE=2V
Ic=100mA,IB=0
MHz Ic=250mA, VCE=10V