HSBD236 Datasheet, PDF (1/1 Pages) SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD – PNP SILICON TRANSISTOR

Shantou Huashan Electronic Devices Co.,Ltd.
PNP S I L I C O N T R A N S I S T O R
HSBD236
█ APPLICATIONS
Medium Power Linear switching Applications
█ ABSOLUTE MAXIMUM RATINGS（T_a=25℃）
T_stg——Storage Temperature………………………… -55~150℃
T_j——Junction Temperature……………………………… 150℃
P_C——Collector Dissipation（T_c=25℃）…………………… 25W
V_CBO——Collector-Base Voltage…………………………… -60V
V_CEO——Collector-Emitter Voltage………………………… -60V
V_CER——Collector-Emitter Voltage………………………… -60V
V_EBO——Emitter-Base Voltage………………………………… -5V
I_C——Collector Curren（t Pulse）………………………………… -6A
I_C——Collector Current（DC）……………………………… -2A
1―Emitter, E
2―Collector，C
3―Base，B
█ ELECTRICAL CHARACTERISTICS（T_a=25℃）
Symbol
Characteristics
Min Typ Max Unit
Test Conditions
ICBO Collector Cut-off Current
IEBO Emitter Cut-off Current
*HFE（1） DC Current Gain
40
*HFE（2） DC Current Gain
25
*VCE(sat) Collector- Emitter Saturation Voltage
*VBE(on) Base-Emitter On Voltage
VCEO(sus) Collector-Emitter Sustaining Voltage -60
ft
Current Gain-Bandwidth Product
3
* Pulse Test:PW=300μS,Duty Cycle=1.5% Pulsed
-100 μA V_CB=-60V, I_E=0
-1 mA V_EB=-5V, I_C=0
V_CE=-2V, I_C=-150mA
V_CE=-2V, I_C=-1A
-0.6 V
-1.3 V
V
MHz
I_C=-1A, I_B=-0.1A
V_CE=-2V, I_C=-1A
I_C=-100mA, I_B=0
V_CE=-10V, I_C=-250mA,