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HSBD180 Datasheet, PDF (1/1 Pages) SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD – PNP SILICON TRANSISTOR | |||
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Shantou Huashan Electronic Devices Co.,Ltd.
PNP SILICON TRANSISTOR
HSBD180
â APPLICATIONS
Medium Power Linear switching Applications
â ABSOLUTE MAXIMUM RATINGSï¼Ta=25âï¼
TstgââStorage Temperatureâ¦â¦â¦â¦â¦â¦â¦â¦â¦â¦ -55~150â
TjââJunction Temperatureâ¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦ 150â
PCââCollector Dissipationï¼Tc=25âï¼â¦â¦â¦â¦â¦â¦â¦â¦ 30W
VCBOââCollector-Base Voltageâ¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦ -80V
VCEOââCollector-Emitter Voltageâ¦â¦â¦â¦â¦â¦â¦â¦â¦â¦ -80V
VEBOââEmitter-Base Voltageâ¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦ -5V
ICââCollector Currenï¼t Pulseï¼â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦ -7A
ICââCollector Currentï¼DCï¼â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦ -3A
1âEmitter, E
2âCollectorï¼C
3âBaseï¼B
â ELECTRICAL CHARACTERISTICSï¼Ta=25âï¼
Symbol
Characteristics
Min Typ Max Unit
Test Conditions
ICBO Collector Cut-off Current
IEBO Emitter Cut-off Current
*HFEï¼1ï¼ DC Current Gain
40
*HFEï¼2ï¼ DC Current Gain
15
*VCE(sat) Collector- Emitter Saturation Voltage
*VBE(on) Base-Emitter On Voltage
VCEO(sus) Collector-Emitter Sustaining Voltage -80
ft
Current Gain-Bandwidth Product
3
*Pulse Test:PW=350μs,Duty Cycle=1.5% Pulsed
-100 μA VCB=-80V, IE=0
-1 mA VEB=-5V, IC=0
250
VCE=-2V, IC=-150mA
VCE=-2V, IC=-1A
-0.8 V IC=-1A, IB=-0.1A
-1.3 V VCE=-2V, IC=-1A
V IC=-100mA, IB=0
MHz VCE=-10V, IC=-250mA,
âhFE(3) Classification
Cassification
6
10
16
hFE(3)
40~100
63~160
100~250
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