HSBD178 Datasheet, PDF (1/1 Pages) SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD – PNP SILICON TRANSISTOR

Shantou Huashan Electronic Devices Co.,Ltd.
PNP SILICON TRANSISTOR
HSBD178
█ APPLICATIONS
Medium Power Linear switching Applications
█ ABSOLUTE MAXIMUM RATINGS（T_a=25℃）
T_stg——Storage Temperature………………………… -55~150℃
T_j——Junction Temperature……………………………… 150℃
P_C——Collector Dissipation（T_c=25℃）…………………… 30W
V_CBO——Collector-Base Voltage…………………………… -60V
V_CEO——Collector-Emitter Voltage………………………… -60V
V_EBO——Emitter-Base Voltage………………………………… -5V
I_C——Collector Curren（t Pulse）………………………………… -7A
I_C——Collector Current（DC）……………………………… -3A
1―Emitter, E
2―Collector，C
3―Base，B
█ ELECTRICAL CHARACTERISTICS（T_a=25℃）
Symbol
Characteristics
Min Typ Max Unit
Test Conditions
ICBO Collector Cut-off Current
IEBO Emitter Cut-off Current
*HFE（1） DC Current Gain
40
*HFE（2） DC Current Gain
15
*VCE(sat) Collector- Emitter Saturation Voltage
*VBE(on) Base-Emitter On Voltage
VCEO(sus) Collector-Emitter Sustaining Voltage -60
ft
Current Gain-Bandwidth Product
3
*Pulse Test:PW=300μs,Duty Cycle=1.5% Pulsed
-100 μA V_CB=-60V, I_E=0
-1 mA V_EB=-5V, I_C=0
250
V_CE=-2V, I_C=-150mA
V_CE=-2V, I_C=1A
-0.8 V I_C=-1A, I_B=-0.1A
-1.3 V V_CE=-2V, I_C=-1A
V I_C=-100mA, I_B=0
MHz V_CE=-10V, I_C=-250mA,
█h_FE(3) Classification
Cassification
6
10
16
h_FE(3)
40~100
63~160
100~250