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HSBD177 Datasheet, PDF (1/1 Pages) SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD – NPN SILICON TRANSISTOR | |||
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Shantou Huashan Electronic Devices Co.,Ltd.
NPN SILICON TRANSISTOR
HSBD177
â APPLICATIONS
Medium Power Linear switching Applications
â ABSOLUTE MAXIMUM RATINGSï¼Ta=25âï¼
TstgââStorage Temperatureâ¦â¦â¦â¦â¦â¦â¦â¦â¦â¦ -55~150â
TjââJunction Temperatureâ¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦ 150â
PCââCollector Dissipationï¼Tc=25âï¼â¦â¦â¦â¦â¦â¦â¦â¦ 30W
VCBOââCollector-Base Voltageâ¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦ 60V
VCEOââCollector-Emitter Voltageâ¦â¦â¦â¦â¦â¦â¦â¦â¦â¦ 60V
VEBOââEmitter-Base Voltageâ¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦ 5V
ICââCollector Currentï¼Pulseï¼â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦ 7A
ICââCollector Currentï¼DCï¼â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦ 3A
1âEmitter, E
2âCollectorï¼C
3âBaseï¼B
â ELECTRICAL CHARACTERISTICSï¼Ta=25âï¼
Symbol
Characteristics
Min Typ Max Unit
Test Conditions
ICBO Collector Cut-off Current
IEBO Emitter Cut-off Current
*HFEï¼1ï¼ DC Current Gain
40
*HFEï¼2ï¼ DC Current Gain
15
*VCE(sat) Collector- Emitter Saturation Voltage
*VBE(on) Base-Emitter On Voltage
VCEO(sus) Collector-Emitter Sustaining Voltage 60
ft
Current Gain-Bandwidth Product
3
*Pulse Test:PW=300μs,Duty Cycle=1.5% Pulsed
100 μA VCB=60V, IE=0
1 mA VEB=5V, IC=0
250
VCE=2V, IC=150mA
VCE=2V, IC=1A
0.8 V IC=1A, IB=0.1A
1.3 V VCE=2V, IC=1A
V IC=100mA, IB=0
MHz VCE=10V, IC=250mA,
âhFE(3) Classification
Cassification
6
10
16
hFE(3)
40~100
63~160
100~250
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