HSBD175 Datasheet, PDF (1/1 Pages) SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD – NPN SILICON TRANSISTOR

Shantou Huashan Electronic Devices Co.,Ltd.
NPN SILICON TRANSISTOR
HSBD175
█ APPLICATIONS
Medium Power Linear switching Applications
█ ABSOLUTE MAXIMUM RATINGS（T_a=25℃）
T_stg——Storage Temperature………………………… -55~150℃
T_j——Junction Temperature……………………………… 150℃
P_C——Collector Dissipation（T_c=25℃）…………………… 30W
V_CBO——Collector-Base Voltage…………………………… 45V
V_CEO——Collector-Emitter Voltage………………………… 45V
V_EBO——Emitter-Base Voltage………………………………… 5V
I_C——Collector Current（Pulse）………………………………… 7A
I_C——Collector Current（DC）……………………………… 3A
1―Emitter, E
2―Collector，C
3―Base，B
█ ELECTRICAL CHARACTERISTICS（T_a=25℃）
Symbol
Characteristics
Min Typ Max Unit
Test Conditions
ICBO Collector Cut-off Current
IEBO Emitter Cut-off Current
*HFE（1） DC Current Gain
40
*HFE（2） DC Current Gain
15
*VCE(sat) Collector- Emitter Saturation Voltage
*VBE(on) Base-Emitter On Voltage
VCEO(sus) Collector-Emitter Sustaining Voltage 45
ft
Current Gain-Bandwidth Product
3
*Pulse Test:PW=300μs,Duty Cycle=1.5% Pulsed
100 μA V_CB=45V, I_E=0
1 mA V_EB=5V, I_C=0
250
V_CE=2V, I_C=150mA
V_CE=2V, I_C=1A
0.8 V I_C=1A, I_B=0.1A
1.3 V V_CE=2V, I_C=1A
V I_C=100mA, I_B=0
MHz V_CE=10V, I_C=250mA,
█h_FE(3) Classification
Cassification
6
10
16
h_FE(3)
40~100
63~160
100~250