HSBD140 Datasheet, PDF (1/2 Pages) List of Unclassifed Manufacturers – PNP SILICON TRANSISTOR

Shantou Huashan Electronic Devices Co.,Ltd.
PNP SILICON TRANSIST OR
HSBD140
APPLICATIONS
Medium Power Linear switching Applications
ABSOLUTE MAXIMUM RATINGS T_a=25
T_stg Storage Temperature
-55~150
T_j Junction Temperature
150
P_C Collector Dissipation T_c=25
12.5W
P_C Collector Dissipation T_A=25
1.25W
V_CBO Collector-Base Voltage
-80V
V_CEO Collector-Emitter Voltage
-80V
V_EBO Emitter-Base Voltage
-5V
I_C Collector Current Pulse
-3A
I_C Collector Current DC
-1.5A
I_B Base Current
-0.5A
ELECTRICAL CHARACTERISTICS T_a=25
Symbol
Characteristics
I_CBO Collector Cut-off Current
I_EBO Emitter-Base Cut-off Current
*h_FE(1) DC Current Gain
*h_FE(2)
*h_FE(3)
*V_CE(sat) Collector-Emitter Saturation Voltage
*VBE(ON) Base-Emitter On Voltage
*VCEO(SUS) Collector-Emitter Sustaining Voltage
*Pulse Test:PW=350 s,Duty Cycie=2% Pulsed
Min Typ
25
25
40
-80
h_FE(3) Classification
Max
-0.1
-10
250
-0.5
-1.0
1 Emitter, E
2 Collector C
3 Base B
Unit
Test Conditions
A _{VCB=-30V, IE=0}
A _{VEB=-5V, IC=0}
VCE=-2V, IC=-5mA
VCE=-2V, IC=-0.5A
VCE=-2V, IC=-150mA
V Ic=-500mA, IB=-50mA
V Ic=-0.5A, VCE=-2V
Ic=-30mA,IB=0
Cassification
6
10
16
h_FE(3)
40~100
63~160
100~250