HSBD139 Datasheet, PDF (1/2 Pages) SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD – NPN SILICON TRANSISTOR

Shantou Huashan Electronic Devices Co.,Ltd.
NPN SILICON TRANSIST OR
HSBD139
APPLICATIONS
Medium Power Linear switching Applications
ABSOLUTE MAXIMUM RATINGS T_a=25
T_stg Storage Temperature
T_j Junction Temperature
P_C Collector Dissipation T_c=25
P_C Collector Dissipation T_A=25
V_CBO Collector-Base Voltage
V_CEO Collector-Emitter Voltage
V_EBO Emitter-Base Voltage
I_C Collector Current Pulse
I_C Collector Current DC
I_B Base Current
-55~150
150
12.5W
1.25W
80V
80V
5V
3A
1.5A
0.5A
1 Emitter, E
2 Collector C
3 Base B
ELECTRICAL CHARACTERISTICS T_a=25
Symbol
I_CBO
I_EBO
h_FE(1)
h_FE(2)
h_FE(3)
V_CE(sat)
VBE(ON)
VCEO(SUS)
Characteristics
Collector Cut-off Current
Emitter-Base Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Collector-Emitter Sustaining Voltage
Min Typ Max Unit
Test Conditions
0.1
A _{VCB=30V, IE=0}
10
A _{VEB=5V, IC=0}
25
VCE=2V, IC=5mA
25
VCE=2V, IC=0.5A
40
250
VCE=2V, IC=150mA
0.5
V Ic=500mA, IB=50mA
1.0
V Ic=0.5A, VCE=2V
80
Ic=30mA,IB=0
h_FE(3) Classification
Cassification
6
10
16
h_FE(3)
40~100
63~160
100~250