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HSBD138 Datasheet, PDF (1/1 Pages) SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD – PNP SILICON TRANSISTOR | |||
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Shantou Huashan Electronic Devices Co.,Ltd.
PNP S I L I C O N T R A N S I S T O R
HSBD138
â APPLICATIONS
Medium Power Linear switching Applications
â ABSOLUTE MAXIMUM RATINGSï¼Ta=25âï¼
TstgââStorage Temperatureâ¦â¦â¦â¦â¦â¦â¦â¦â¦â¦ -55~150â
TjââJunction Temperatureâ¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦ 150â
PCââCollector Dissipationï¼Tc=25âï¼â¦â¦â¦â¦â¦â¦â¦â¦ 12.5W
PCââCollector Dissipationï¼TA=25âï¼â¦â¦â¦â¦â¦â¦â¦â¦ 1.25W
VCBOââCollector-Base Voltageâ¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦ -60V
VCEOââCollector-Emitter Voltageâ¦â¦â¦â¦â¦â¦â¦â¦â¦â¦ -60V
VEBOââEmitter-Base Voltageâ¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦ -5V
ICââCollector Currenï¼t Pulseï¼â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦ -3A
ICââCollector Currentï¼DCï¼â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦ -1.5A
IBââBase Currentâ¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦-0.5A
1âEmitter, E
2âCollectorï¼C
3âBaseï¼B
â ELECTRICAL CHARACTERISTICSï¼Ta=25âï¼
Symbol
ICBO
IEBO
hFE(1)
hFE(2)
hFE(3)
VCE(sat)
VBE(ON)
VCEO(SUS)
Characteristics
Collector Cut-off Current
Emitter-Base Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Collector-Emitter Sustaining Voltage
Min Typ Max Unit
Test Conditions
-0.1 μA VCB=-30V, IE=0
-10 μA VEB=-5V, IC=0
25
VCE=-2V, IC=-5mA
25
VCE=-2V, IC=-0.5A
40
250
VCE=-2V, IC=-150mA
-0.5 V Ic=-500mA, IB=-50mA
-1.0 V Ic=-0.5A, VCE=-2V
-60
Ic=-30mA,IB=0
âhFE(3) Classification
Cassification
6
10
16
hFE(3)
40~100
63~160
100~250
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