HSBD136 Datasheet, PDF (1/1 Pages) SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD – PNP SILICON TRANSISTOR

Shantou Huashan Electronic Devices Co.,Ltd.
PN P S I L I C O N T R A N S I S T O R
HSBD136
█ APPLICATIONS
Medium Power Linear switching Applications
█ ABSOLUTE MAXIMUM RATINGS（T_a=25℃）
T_stg——Storage Temperature………………………… -55~150℃
T_j——Junction Temperature……………………………… 150℃
P_C——Collector Dissipation（T_c=25℃）…………………… 12.5W
P_C——Collector Dissipation（T_A=25℃）…………………… 1.25W
V_CBO——Collector-Base Voltage…………………………… -45V
V_CEO——Collector-Emitter Voltage………………………… -45V
V_EBO——Emitter-Base Voltage………………………………… -5V
I_C——Collector Curren（t Pulse）………………………………… -3A
I_C——Collector Current（DC）……………………………… -1.5A
I_B——Base Current……………………………………………-0.5A
█ ELECTRICAL CHARACTERISTICS（T_a=25℃）
1―Emitter, E
2―Collector，C
3―Base，B
Symbol
Characteristics
I_CBO Collector Cut-off Current
I_EBO Emitter-Base Cut-off Current
h_FE(1) DC Current Gain
h_FE(2)
*h_FE(3)
*V_CE(sat)
*VBE(ON)
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
*VCEO(SUS) Collector-Emitter Sustaining Voltage
*Pulse Test:PW=350 μs,Duty Cycie=2% Pulsed
█h_FE(3) Classification
Min Typ Max Unit
Test Conditions
-0.1 μA _{VCB=-30V, IE=0}
-10 μA _{VEB=-5V, IC=0}
25
VCE=-2V, IC=-5mA
25
VCE=-2V, IC=-0.5A
40
250
VCE=-2V, IC=-150mA
-0.5 V Ic=-500mA, IB=-50mA
-1.0 V Ic=-0.5A, VCE=-2V
-45
Ic=-30mA,IB=0
Cassification
6
10
16
h_FE(3)
40~100
63~160
100~250