HSBD135 Datasheet, PDF (1/1 Pages) SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD – NPN SILICON TRANSISTOR

Shantou Huashan Electronic Devices Co.,Ltd.
NPN S I L I C O N T R A N S I S T O R
HSBD135
█ APPLICATIONS
Medium Power Linear switching Applications
█ ABSOLUTE MAXIMUM RATINGS（T_a=25℃）
T_stg——Storage Temperature………………………… -55~150℃
T_j——Junction Temperature……………………………… 150℃
P_C——Collector Dissipation（T_c=25℃）…………………… 12.5W
P_C——Collector Dissipation（T_A=25℃）…………………… 1.25W
V_CBO——Collector-Base Voltage…………………………… 45V
V_CEO——Collector-Emitter Voltage………………………… 45V
V_EBO——Emitter-Base Voltage………………………………… 5V
I_C——Collector Current（Pulse）………………………………… 3A
I_C——Collector Current（DC）……………………………… 1.5A
I_B——Base Current………………………………………………0.5A
█ ELECTRICAL CHARACTERISTICS（T_a=25℃）
Symbol
I_CBO
I_EBO
h_FE(1)
h_FE(2)
h_FE(3)
V_CE(sat)
VBE(ON)
VCEO(SUS)
Characteristics
Collector Cut-off Current
Emitter-Base Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Collector-Emitter Sustaining Voltage
Min Typ Max
0.1
10
25
25
40
250
0.5
1.0
45
1―Emitter, E
2―Collector，C
3―Base，B
Unit
Test Conditions
μA _{VCB=30V, IE=0}
μA _{VEB=5V, IC=0}
VCE=2V, IC=5mA
VCE=2V, IC=0.5A
VCE=2V, IC=150mA
V Ic=500mA, IB=50mA
V Ic=0.5A, VCE=2V
Ic=30mA,IB=0
█h_FE(3) Classification
Cassification
6
10
16
h_FE(3)
40~100
63~160
100~250