HS945 Datasheet, PDF (1/1 Pages) SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD – NPN SILICON TRANSISTOR

Shantou Huashan Electronic Devices Co.,Ltd.
NPN S I L I C O N T R A N S I S T O R
HS945
APPLICATIONS
The H945 is designed for driver stage of AF amplifier
And low speed switching.
ABSOLUTE MAXIMUM RATINGS T_a=25
T_stg Storage Temperature
-55~150
T_j Junction Temperature
150
P_C Collector Dissipation
25 0mW
V_CBO Collector-Base Voltage
60V
V_CEO Collector-Emitter Voltage
50V
V_EBO Emitter - Base Voltage
5V
I_C Collector Current
150mA
TO-92
1 Emitter E
2 Base B
3 Collector C
ELECTRICAL CHARACTERISTICS T_a=25
Symbol
Characteristics
Min Typ Max Unit
Test Conditions
BVCBO
BVCEO
BVEBO
HFE
VCE(sat)
VBE(sat)
ICBO
IEBO
fT
Cob
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
DC Current Gain
Collector- Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Collector Cut-off Current
Emitter Cut-off Current
Current Gain-Bandwidth Product
Output Capacitance
I_C=100 A, I_E=0
I_C=100 A, I_B=0
I_E=100 A I_C=0
V_CE=6V, I_C=1mA
I_C=100mA, I_B=10mA
I_C=100mA, I_B=10mA
V_CB=60V, I_E=0
V_EB=5V, I_C=0
V_CE=6V, I_C=10mA
V_CB=6V, I_E=0 f=1
NF Noise Figure
hFE Classification
O
Y
GR
BL