HS882 Datasheet, PDF (1/1 Pages) SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD – NPN SILICON TRANSISTOR

Shantou Huashan Electronic Devices Co.,Ltd.
NPN S I L I C O N T R A N S I S T O R
HS882
APPLICATIONS
Audio Frequency Power Amplifier , Switching Power Amplifier.
ABSOLUTE MAXIMUM RATINGS T_a=25
T_stg Storage Temperature
T_j Junction Temperature
P_C Collector Dissipation T_c=25
P_C Collector Dissipation T_A=25
V_CBO Collector-Base Voltage
V_CEO Collector-Emitter Voltage
V_EBO Emitter-Base Voltage
I_C Collector Current DC
Ib Base Current DC
-55~150
150
10W
1W
40V
30V
5V
3A
0.6A
Electrical Characteristics T_a=25
TO-126
1 Emitter E
2 Collector C
3 Base B
Symbol
I_CBO
Parameter
Collector-Base Cutoff Current
Min Typ Max Unit
Test Conditions
1
A V_CB=30V, I_E=0
I_EBO
Emitter- Base Cutoff Current
1
A
VEB=5V, IC=0
h_FE
V_{CE sat}
VBE sat
DC Current Gain
60
Collector- Emitter Saturation Voltage
Base -Emitter Saturation Voltage
400
0.3 0.5
1.0 2.0
VCE=2V, IC=1A
V ^{IC=2A, IB=0.2A}
V ^{IC=2A, IB=0.2A}
C_ob
Output Capacitance
45
pF VCB=10V IE=0 f=1MHz
f_T
Current Gain-Bandwidth Product
90
MHz
VCE=5V IE=0.1A
hFE Classification
R
Q
P
E
60 120
100 200
160 320
200 400