HS669A Datasheet, PDF (1/2 Pages) List of Unclassifed Manufacturers – NPN SILICON TRANSISTOR

Shantou Huashan Electronic Devices Co.,Ltd.
NPN S I L I C O N T R A N S I S T O R
HS669A
█ APPLICATIONS
Low Frequancy Power Amplifier.
█ ABSOLUTE MAXIMUM RATINGS（T_a=25℃）
T_stg——Storage Temperature………………………… -55~150℃
T_j——Junction Temperature……………………………… 150℃
P_C——Collector Dissipation（T_c=25℃）…………………… 20W
P_C——Collector Dissipation（T_A=25℃）…………………… 1W
V_CBO——Collector-Base Voltage………………………… 180V
V_CEO——Collector-Emitter Voltage……………………… 160V
V_EBO——Emitter-Base Voltage……………………………… 5V
I_C——Collector Current………………………………………1.5A
TO-126
1―Emitter，E
2―Collector，C
3―Base，B
█ ELECTRICAL CHARACTERISTICS（T_a=25℃）
Symbol
Characteristics
Min Typ Max Unit
Test Conditions
BVCBO Collector-Base Breakdown Voltage
180
V I_C= 1mA, I_E=0
BVCEO Collector-Emitter Breakdown Voltage 160
V I_C= 10mA, I_B=0
BVEBO Emitter-Base Breakdown Voltage
5
V I_E= 1mA, I_C=0
ICBO Collector Cut-off Current
10 μA V_CB=160V, I_E=0
HFE（1） DC Current Gain
60
200
V_CE= 5V, I_C= 150mA
HFE（2） DC Current Gain
30
V_CE= 5V, I_C= 500mA
VCE(sat) Collector- Emitter Saturation Voltage
1 V I_C= 500mA, I_B= 50mA
VBE Base-Emitter Voltage
1.5 V V_CE=5V, I_C=150mA
ft
Current Gain-Bandwidth Product
140
MHz V_CE=5V, I_C=150mA,
Cob Output Capacitance
14
pF V_CB=10V, I_E=0，f=1MHz
█ hFE Classification
B
60—120
C
100—200