HS649A Datasheet, PDF (1/1 Pages) SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD – PNP SILICON TRANSISTOR

Shantou Huashan Electronic Devices Co.,Ltd.
APPLICATIONS
Low Frequancy Power Amplifier.
ABSOLUTE MAXIMUM RATINGS T_a=25
T_stg Storage Temperature
T_j Junction Temperature
P_C Collector Dissipation T_c=25
P_C Collector Dissipation T_A=25
V_CBO Collector-Base Voltage
V_CEO Collector-Emitter Voltage
V_EBO Emitter-Base Voltage
I_C Collector Current
55~150
150
20W
1W
-180V
-160V
-5V
-1.5A
PNP S I L I C O N T R A N S I S T O R
HS649A
TO-126
1 Emitter E
2 Collector C
3 Base B
ELECTRICAL CHARACTERISTICS T_a=25
Symbol
Characteristics
Min Typ
BVCBO Collector-Base Breakdown Voltage
BVCEO Collector-Emitter Breakdown Voltage
BVEBO
ICBO
HFE 1
Emitter-Base Breakdown Voltage
Collector Cut-off Current
DC Current Gain
HFE 2
VCE(sat)
VBE
DC Current Gain
Collector- Emitter Saturation Voltage
Base-Emitter Voltage
ft
Current Gain-Bandwidth Product
Cob Output Capacitance
Max Unit
Test Conditions
I_C=-1mA, I_E=0
I_C=-10mA, I_B=0
I_E=-1mA, I_C=0
V_CB=-160V, I_E=0
V_CE=-5V, I_C=-150mA
V_CE=-5V, I_C=-500mA
I_C=-500mA, I_B=-50mA
V_CE=-5V, I_C=-150mA
V_CE=-5V, I_C=-150mA,
V_CB=-10V, I_E=0 f=1
hFE Classification
B
60 120
C
100 200