HS631K Datasheet, PDF (1/3 Pages) SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD – PNP SILICON TRANSISTOR

Shantou Huashan Electronic Devices Co.,Ltd.
PNP S I L I C O N T R A N S I S T O R
HS631K
█ APPLICATIONS
Low frequency power amplifier，Medium Seed switching.
█ ABSOLUTE MAXIMUM RATINGS（T_a=25℃）
T_stg——Storage Temperature………………………… -55~150℃
T_j——Junction Temperature……………………………… 150℃
P_C——Collector Dissipation（T_c=25℃）……………………… 1W
V_CBO——Collector-Base Voltage………………………… -120V
V_CEO——Collector-Emitter Voltage……………………… -120V
V_EBO——Emitter-Base Voltage………………………………-5V
I_C——Collector Current………………………………………-1A
TO-126
1―Emitter，E
2―Collector，C
3―Base，B
█ ELECTRICAL CHARACTERISTICS（T_a=25℃）
Symbol
Characteristics
BVCBO Collector-Base Breakdown Voltage
BVCEO Collector-Emitter Breakdown Voltage
BVEBO Emitter-Base Breakdown Voltage
ICBO Collector Cut-off Current
IEBO Emitter Cut-off Current
HFE（1） DC Current Gain
HFE（2） DC Current Gain
VCE(sat) Collector- Emitter Saturation Voltage
VBE(sat) Base-Emitter Saturation Voltage
tOFF Turn-Off Time
tSTG Storage Time
tF Fall Time
ft
Current Gain-Bandwidth Product
Cob Output Capacitance
Min
-120
-120
-5
60
20
Typ
-0.15
-0.85
100
600
80
110
30
Max
-1
-1
320
-0.4
-1.2
Unit
Test Conditions
V I_C=-10μA, I_E=0
V I_C=-1mA, I_B=0
V I_E=-10μA，I_C=0
μA V_CB=-50V, I_E=0
μA V_EB=-4V, I_C=0
V_CE=-5V, I_C=-50mA
V_CE=-5V, I_C=-500mA
V I_C=-500mA, I_B=-50mA
V I_C=-500mA, I_B=-50mA
nS
nS
See specified test circuit
nS
MHz V_CE=-10V, I_C=-50mA,
pF V_CB=10V, I_E=0，f=1MHz
█ hFE Classification
D
60—120
E
100—200
F
160—320