HS600K Datasheet, PDF (1/3 Pages) SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD – NPN S I L I C O N T R A N S I S T O R

Shantou Huashan Electronic Devices Co.,Ltd.
NPN S I L I C O N T R A N S I S T O R
HS600K
█ APPLICATIONS
Low frequency power amplifier，Medium Seed switching.
█ ABSOLUTE MAXIMUM RATINGS（T_a=25℃）
T_stg——Storage Temperature………………………… -55~150℃
T_j——Junction Temperature……………………………… 150℃
P_C——Collector Dissipation（T_c=25℃）……………………… 1W
V_CBO——Collector-Base Voltage………………………… 120V
V_CEO——Collector-Emitter Voltage……………………… 120V
V_EBO——Emitter-Base Voltage……………………………… 5V
I_C——Collector Current………………………………………1A
TO-126
1―Emitter，E
2―Collector，C
3―Base，B
█ ELECTRICAL CHARACTERISTICS（T_a=25℃）
Symbol
Characteristics
Min Typ Max Unit
Test Conditions
BVCBO Collector-Base Breakdown Voltage
120
V I_C=10μA, I_E=0
BVCEO Collector-Emitter Breakdown Voltage 120
V I_C=1mA, I_B=0
BVEBO Emitter-Base Breakdown Voltage
5
V I_E=10μA，I_C=0
ICBO Collector Cut-off Current
1 μA V_CB=50V, I_E=0
IEBO Emitter Cut-off Current
1 μA V_EB=4V, I_C=0
HFE（1） DC Current Gain
60
320
V_CE=5V, I_C=50mA
HFE（2） DC Current Gain
20
V_CE=5V, I_C=500mA
VCE(sat) Collector- Emitter Saturation Voltage
0.15 0.4 V I_C=500mA, I_B=50mA
VBE(sat) Base-Emitter Saturation Voltage
0.85 1.2 V I_C=500mA, I_B=50mA
tOFF Turn-Off Time
500
nS
tSTG Storage Time
700
nS
See specified test circuit
tF Fall Time
100
nS
ft
Current Gain-Bandwidth Product
130
MHz V_CE=10V, I_C=50mA,
Cob Output Capacitance
20
pF V_CB=10V, I_E=0，f=1MHz
█ hFE Classification
D
60—120
E
100—200
F
160—320