HS2236 Datasheet, PDF (1/2 Pages) SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD – NPN SILICON TRANSISTOR

Shantou Huashan Electronic Devices Co.,Ltd.
NPN S I L I C O N T R A N S I S T O R
HS2236
█ APPLICATIONS
Audio Power Amplifier.
█ ABSOLUTE MAXIMUM RATINGS（T_a=25℃）
T_stg——Storage Temperature………………………… -55~150℃
T_j——Junction Temperature……………………………… 150℃
P_C——Collector Dissipation（T_c=25℃）………………… 900mW
V_CBO——Collector-Base Voltage………………………… 30V
V_CEO——Collector-Emitter Voltage……………………… 30V
V_EBO——Emitter-Base Voltage……………………………… 5V
I_C——Collector Current………………………………………1.5A
Ib——Base Current…………………………………………0.15A
TO-126
1―Emitter，E
2―Collector，C
3―Base，B
█ ELECTRICAL CHARACTERISTICS（T_a=25℃）
Symbol
Characteristics
Min Typ Max Unit
Test Conditions
BVCEO Collector-Emitter Breakdown Voltage 30
V I_C=10mA, I_B=0
BVEBO Emitter-Base Breakdown Voltage
5
V I_E=1mA，I_C=0
IEBO Emitter Cut-off Current
100 nA V_EB=5V, I_C=0
ICBO Collector Cut-off Current
100 nA V_CB=30V, I_E=0
HFE DC Current Gain
100
320
V_CE=2V, I_C=500mA
VCE(sat) Collector- Emitter Saturation Voltage
2 V I_C=1.5A, I_B=0.03A
VBE Base-Emitter Voltage
1
V V_CE=2V, I_C=500mA
ft
Current Gain-Bandwidth Product
120
MHz V_CE=2V, I_C=500mA,
Cob Output Capacitance
30 pF V_CB=10V, I_E=0，f=1MHz
█ hFE Classification
O
100—200
Y
160—320