HS13003 Datasheet, PDF (1/1 Pages) SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD – NPN SILICON TRANSISTOR

Shantou Huashan Electronic Devices Co.,Ltd.
NPN SILICON TRANSISTOR
HS13003
█ HIGH VOLTAGE SWITCH MODE APPLICICATIONS
High Speed Switching
Suitable for Switching Regulator and Montor Control
█ ABSOLUTE MAXIMUM RATINGS（T_a=25℃）
T_stg——Storage Temperature………………………… -65~150℃
T_j——Junction Temperature…………………………………150℃
P_C——Collector Dissipation…………………………………30W
V_CBO——Collector-Base Voltage………………………………600V
V_CEO——Collector-Emitter Voltage……………………………400V
V_EBO——Emitter-Base Voltage………………………………9V
I_C——Collector Current……………………………………1.5A
█ ELECTRICAL CHARACTERISTICS（T_a=25℃）
1―Base，B
2―Collector，C
3― Emitter，E
Symbol
Characteristics
Min Typ Max Unit
Test Conditions
BVCBO Collector-Base Breakdown Voltage
600
BVCEO Collector-Emitter Breakdown Voltage
400
BVEBO Emitter-Base Breakdown Voltage
9
HFE DC Current Gain
10
VCE(sat)1 Collector- Emitter Saturation Voltage
VCE(sat)2 Collector- Emitter Saturation Voltage
VBE(sat) Base-Emitter Saturation Voltage
ICBO Collector Cut-off Current
IEBO Emitter-Base Cut-off Current
fT Current Gain-Bandwidth Product
8
tON Turn On Time
V I_C=1mA, IE=0
V I_C=10mA, IB=0
V I_E=1mA， I_C=0
40
V_CE=10V, I_C=0.1A
0.8 V I_C=1A, I_B=500mA
0.8 V I_C=0.5A, I_B=100mA
1.2 V I_C=0.5A, IB=100mA
10 μA V_CB=500V, I_E=0
10 μA V_EB=9V, I_C=0
MHz VCE=10V,IC=0.1A,f=1MHz
1.1 ^μs
V_CC=125V, I_C=1A,
tSTG Storage Time
tF
Fall Time
4.0 μs
0.7 μs
I_B1=0.2A,I_B2=-0.2A
RL=125Ω
█ hFE Classification
H1
10-16
H2
14-21
H3
19-26
H4
24-31
H5
29-40