HS1205 Datasheet, PDF (1/1 Pages) SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD – PNP SILICON TRANSISTOR

Shantou Huashan Electronic Devices Co.,Ltd.
PNP S I L I C O N T R A N S I S T O R
HS1205
█ APPLICATIONS
Large Current Switching
█ ABSOLUTE MAXIMUM RATINGS（T_a=25℃）
T_stg——Storage Temperature………………………… -55~150℃
T_j——Junction Temperature……………………………… 150℃
P_C——Collector Dissipation（T_c=25℃）…………………… 10W
P_C——Collector Dissipation（T_A=25℃）…………………… 1W
V_CBO——Collector-Base Voltage………………………… -25V
V_CEO——Collector-Emitter Voltage……………………… -20V
V_EBO——Emitter-Base Voltage……………………………… -5V
I_C——Collector Current………………………………………-5A
TO-126
1―Base，B
2―Collector，C
3―Emitter，E
█ ELECTRICAL CHARACTERISTICS（T_a=25℃）
Symbol
Characteristics
Min Typ Max Unit
Test Conditions
BVCBO Collector-Base Breakdown Voltage -25
BVCEO Collector-Emitter Breakdown Voltage -20
V I_C=-10μA, I_E=0
V I_C=-1mA, I_B=0
BVEBO Emitter-Base Breakdown Voltage
-5
V I_E=-10μA, I_C=0
ICBO Collector Cut-off Current
-500 nA V_CB=-20V, I_E=0
IEBO Emitter Cut-off Current
-500 nA V_EB=-4V, I_C=0
HFE（1） DC Current Gain
100
400
V_CE=-2V, I_C=-500mA
HFE（2） DC Current Gain
60
V_CE=-2V, I_C=-4A
VCE(sat1) Collector- Emitter Saturation Voltage
-250 -500 mV I_C=-3A, I_B=-60mA
VCE(sat2) Collector- Emitter Saturation Voltage
-1.0 -1.3 V I_C=-3A, I_B=-60mA
VBE(sat) Base-Emitter Saturation Voltage
-0.94 -1.2 V I_C=-3A, I_B=-60mA
ft
Current Gain-Bandwidth Product
320
MHz V_CE=-5V, I_C=-200mA,
Cob Output Capacitance
60
pF V_CB=-10V, I_E=0，f=1MHz
tON Turn-On Time
40 nS
tSTG Storage Time
200 nS
See specified test circuit
tF Fall Time
10 nS
█ hFE Classification
R
100—200
S
140—280
T
200—400