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HP32CF Datasheet, PDF (1/2 Pages) SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD – PNP SILICON TRANSISTOR | |||
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Shantou Huashan Electronic Devices Co.,Ltd.
PNP S I L I C O N T R A N S I S T O R
HP32CF
â APPLICATIONS
Mediuï½ Power Linear switching Applications.
â ABSOLUTE MAXIMUM RATINGSï¼Ta=25âï¼
TstgââStorage Temperatureâ¦â¦â¦â¦â¦â¦â¦â¦â¦â¦ -55~150â
TjââJunction Temperatureâ¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦150â
PCââCollector Dissipationï¼Tc=25âï¼â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦30W
PCââCollector Dissipationï¼Ta=25âï¼â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦2W
VCBOââCollector-Base Voltageâ¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦-100V
VCEOââCollector-Emitter Voltageâ¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦-100V
VEBOââEmitter-Base Voltageâ¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦-5V
ICââCollector Currenï¼t DCï¼â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦-3A
ICââCollector Currentï¼Pulseï¼â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦-5A
IbââBase Currentâ¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦-1A
TO-220F
1âBaseï¼B
2âCollectorï¼C
3âEmitterï¼E
â ELECTRICAL CHARACTERISTICSï¼Ta=25âï¼
Symbol
Characteristics
Min Typ Max Unit
Test Conditions
BVCEO
HFEï¼1ï¼
HFEï¼2ï¼
VCE(sat)
VBE(ON)
ICEO
ICES
IEBO
fT
Collector-Emitter Breakdown Voltage
*DC Current Gain
*DC Current Gain
*Collector- Emitter Saturation Voltage
*Base-Emitter On Voltage
Collector Cut-off Current
Collector Cut-off Current
Emitter Cut-off Current
Current Gain-Bandwidth Product
-100
25
10
3.0
V IC=-30mA, IB=0
VCE=-4V, IC=-1A
50
VCE=-4V, IC=-3A
-1.2 V IC=-3A, IB=-375mA
-1.8 V VCE=-4V, IC=-3A
-0.3 mA VCB=-60V, IB=0
-200 μA VCE=-100V, VEB=0
-1 mA VEB=-5V, IC=0
MHz VCE=-10V, IC=-0.5Aï¼f=1MHz
*Pulse Testï¼PWâ¤300μsï¼Duty cycleâ¤2%
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