HP31CF Datasheet, PDF (1/2 Pages) SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD – NPN SILICON TRANSISTOR

Shantou Huashan Electronic Devices Co.,Ltd.
NPN S I L I C O N T R A N S I S T O R
HP31CF
█ APPLICATIONS
Mediuｍ Power Linear switching Applications.
█ ABSOLUTE MAXIMUM RATINGS（T_a=25℃）
T_stg——Storage Temperature………………………… -55~150℃
T_j——Junction Temperature…………………………………150℃
P_C——Collector Dissipation（Tc=25℃）……………………………30W
P_C——Collector Dissipation（Ta=25℃）……………………………2W
V_CBO——Collector-Base Voltage………………………………100V
V_CEO——Collector-Emitter Voltage……………………………100V
V_EBO——Emitter-Base Voltage………………………………5V
I_C——Collector Current（DC）………………………………………3A
I_C——Collector Current（Pulse）……………………………………5A
Ib——Base Current………………………………………………1A
TO-220F
1―Base，B
2―Collector，C
3―Emitter，E
█ ELECTRICAL CHARACTERISTICS（T_a=25℃）
Symbol
Characteristics
Min Typ Max Unit
Test Conditions
BVCEO Collector-Emitter Breakdown Voltage 100
HFE（1） *DC Current Gain
25
HFE（2） *DC Current Gain
10
VCE(sat) *Collector- Emitter Saturation Voltage
VBE(ON) *Base-Emitter On Voltage
ICEO Collector Cut-off Current
ICES Collector Cut-off Current
IEBO Emitter Cut-off Current
fT
Current Gain-Bandwidth Product
3.0
V I_C=30mA, I_B=0
V_CE=4V, I_C=1A
50
V_CE=4V, I_C=3A
1.2 V I_C=3A, I_B=375mA
1.8 V V_CE=4V, I_C=3A
0.3 mA V_CB=60V, I_B=0
200 μA V_CE=100V, V_EB=0
1 mA V_EB=5V, I_C=0
MHz V_CE=10V, I_C=0.5A,f=1MHz
*Pulse Test：PW≤300μs，Duty cycle≤2%