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HP31A Datasheet, PDF (1/2 Pages) SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD – NPN SILICON TRANSISTOR | |||
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Shantou Huashan Electronic Devices Co.,Ltd.
NPN S I L I C O N T R A N S I S T O R
HP31A
â APPLICATIONS
Mediuï½ Power Linear switching Applications.
â ABSOLUTE MAXIMUM RATINGSï¼Ta=25âï¼
TstgââStorage Temperatureâ¦â¦â¦â¦â¦â¦â¦â¦â¦â¦ -55~150â
TjââJunction Temperatureâ¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦150â
PCââCollector Dissipationï¼Tc=25âï¼â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦40W
PCââCollector Dissipationï¼Ta=25âï¼â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦2W
VCBOââCollector-Base Voltageâ¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦60V
VCEOââCollector-Emitter Voltageâ¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦60V
VEBOââEmitter-Base Voltageâ¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦5V
ICââCollector Currentï¼DCï¼â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦3A
ICââCollector Currentï¼Pulseï¼â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦5A
IbââBase Currentâ¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦1A
TO-220
1âBaseï¼B
2âCollectorï¼C
3âEmitterï¼E
â ELECTRICAL CHARACTERISTICSï¼Ta=25âï¼
Symbol
Characteristics
Min Typ Max Unit
Test Conditions
BVCEO Collector-Emitter Breakdown Voltage 60
HFEï¼1ï¼ *DC Current Gain
25
HFEï¼2ï¼ *DC Current Gain
10
VCE(sat) *Collector- Emitter Saturation Voltage
VBE(ON) *Base-Emitter On Voltage
ICEO Collector Cut-off Current
ICES Collector Cut-off Current
IEBO Emitter Cut-off Current
fT
Current Gain-Bandwidth Product
3.0
V IC=30mA, IB=0
VCE=4V, IC=1A
50
VCE=4V, IC=3A
1.2 V IC=3A, IB=375mA
1.8 V VCE=4V, IC=3A
0.3 mA VCB=30V, IB=0
200 μA VCE=60V, VEB=0
1 mA VEB=5V, IC=0
MHz VCE=10V, IC=500mA,f=1MHz
*Pulse Testï¼PWâ¤300μsï¼Duty cycleâ¤2%
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