HP147T Datasheet, PDF (1/2 Pages) SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD – NPN SILICON TRANSISTOR

Shantou Huashan Electronic Devices Co.,Ltd.
PNP DARLINGTON TRANSISTOR
HP147T
█ APPLICATIONS
High DC Current Gain
█ ABSOLUTE MAXIMUM RATINGS（T_a=25℃）
T_stg——Storage Temperature………………………… -55~150℃
T_j——Junction Temperature……………………………… 150℃
P_C——Collector Dissipation（T_c=25℃）…………………… 80W
V_CBO——Collector-Base Voltage………………………… -100V
V_CEO——Collector-Emitter Voltage……………………… -100V
V_EBO——Emitter-Base Voltage……………………………… -5V
I_C——Collector Curren（t DC）……………………………… -10A
I_B——Base Current…………………………………………-0.5A
TO-220
1―Base，B
2―Collector，C
3―Emitter, E
█ ELECTRICAL CHARACTERISTICS（T_a=25℃）
Symbol
Characteristics
BVCEO(SUS) Collector-Emitter Sustaining Voltage
ICEO
Collector Cutoff Current
ICBO
Collector Cutoff Current
IEBO
Emitter-Base Cutoff Current
HFE（1） DC Current Gain
HFE（2）
VCE(sat1) Collector- Emitter Saturation Voltage
VCE(sat2)
VBE(sat) Base- Emitter Saturation Voltage
VBE(on) Base- Emitter On Voltage
tD
Deiay time
tR
Rise Time
tS
Storage Time
tF
Fall Time
Min Typ Max Unit
Test Conditions
-100
V I_C=-30mA, I_B=0
-2 mA V_CE=-50V, I_B=0
-1 mA V_CB=-100V, I_E=0
-2 mA V_EB=-5V, I_C=0
1000
V_CE=-4V, I_C=-5A
500
V_CE=-4V, I_C=-10A
-2 V I_C=-5A, I_B=-10mA
-3 V I_C=-10A, I_B=-40mA
-3.5 V I_C=-10A, I_B=-40mA
-3 V V_CE=-4V,I_C=-10A,
0.15
0.55
2.5
uS
uS
Vcc=-30V,Ic=-5A
IB1=-20mA
uS IB2=20mA
2.5
uS