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| HP142TSW Datasheet, PDF (1/3 Pages) SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD – NPN SILICON TRANSISTOR | |||
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Shantou Huashan Electronic Devices Co.,Ltd.
APPLICATIONS
High DC Current Gain
ABSOLUTE MAXIMUM RATINGS Ta=25
Tstg Storage Temperature
Tj Junction Temperature
PC Collector Dissipation Tc=25
VCBO Collector-Base Voltage
VCEO Collector-Emitter Voltage
VEBO Emitter-Base Voltage
IC Collector Current DC
IB Base Current
55~150
150
70W
100V
100V
5V
8A
0.5A
NPN DARLINGTON TRANSISTOR
HP142TSW
TO-263
1 Base B
2 Collector C
3 Emitter, E
ELECTRICAL CHARACTERISTICS Ta=25
Symbol
Characteristics
Min Typ Max Unit
BVCEO(SUS)
ICEO
ICBO
IEBO
HFE 1
HFE 2
VCE(sat1)
VCE(sat2)
VBE(sat)
VBE(on)
tD
Collector-Emitter Sustaining Voltage
Collector Cutoff Current
Collector Cutoff Current
Emitter-Base Cutoff Current
DC Current Gain
Collector- Emitter Saturation Voltage
Base- Emitter Saturation Voltage
Base- Emitter On Voltage
Deiay time
tR
Rise Time
tS
Storage Time
tF
Fall Time
Test Conditions
IC=30mA, IB=0
VCE=50V, IB=0
VCB=100V, IE=0
VEB=5V, IC=0
VCE=4V, IC=0.5A
VCE=4V, IC=3A
IC=5A, IB=10mA
IC=10A, IB=40mA
IC=10A, IB=40mA
VCE=4V,IC=10A,
Vcc=30V,Ic=5A
IB1=20mA
IB2=-20mA
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