HP122W Datasheet, PDF (1/2 Pages) SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD – NPN SILICON TRANSISTOR

Shantou Huashan Electronic Devices Co.,Ltd.
NPN S I L I C O N T R A N S I S T O R
HP122W
APPLICATIONS
NPN Epitaxial Darlington Transistor. High DC Current Gain.
Monolithic Construction with Built-In Base-Emitter Shunt Resistors.
ABSOLUTE MAXIMUM RATINGS T_a=25
T_stg Storage Temperature
-55~150
T_j Junction Temperature
150
P_C Collector Dissipation Tc=25
65W
P_C Collector Dissipation Ta=25
2W
V_CBO Collector-Base Voltage
10 0 V
V_CEO Collector-Emitter Voltage
10 0 V
V_EBO Emitter - Base Voltage
5V
I_C Collector Current DC
5A
I_C Collector Current Pulse
8A
Ib Base Current
120m A
TO-263
1 Base B
2 Collector C
3 Emitter E
ELECTRICAL CHARACTERISTICS T_a=25
Symbol
Characteristics
Min Typ Max Unit
Test Conditions
BVCBO Collector-Base Breakdown Voltage
BVCEO Collector-Emitter Breakdown Voltage
HFE *DC Current Gain
VCE(sat1) *Collector- Emitter Saturation Voltage
VCE(sat2) *Collector- Emitter Saturation Voltage
VBE(ON) *Base-Emitter On Voltage
ICEO Collector Cut-off Current
ICBO Collector Cut-off Current
IEBO Emitter Cut-off Current
Cob Output Capacitance
I_C=1mA, I_E=0
I_C=5mA, I_B=0
V_CE=3V, I_C=0.5A
I_C=3A, I_B=12mA
I_C=3A, I_B=20mA
V_CE=3V, I_C=3A
V_CB=50V, I_B=0
V_CB=100V, I_E=0
V_EB=5V, I_C=0
V_CB=10V, I_E=0 f=0.1
*Pulse Test PW 300
2%