HM28S Datasheet, PDF (1/1 Pages) Hi-Sincerity Mocroelectronics – NPN EPITAXIAL PLANAR TRANSISTOR

Shantou Huashan Electronic Devices Co.,Ltd.
NPN S I L I C O N T R A N S I S T O R
HM28S
APPLICATIONS
General Purpose And Switching Applications.
ABSOLUTE MAXIMUM RATINGS T_a=25
T_stg Storage Temperature
-55~150
T_j Junction Temperature
150
P_C Collector Dissip ation
85 0mW
V_CBO Collector-Base Voltage
40V
V_CEO Collector-Emitter Voltage
20V
V_EBO Emitter - Base Voltage
6V
I_C Collector Current
1.25A
TO-92
1 Emitter E
2 Collector C
3 Base B
ELECTRICAL CHARACTERISTICS T_a=25
Symbol
Characteristics
Min Typ
BVCBO
BVCEO
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
BVEBO
HFE(1)
HFE(2)
Emitter-Base Breakdown Voltage
DC Current Gain
DC Current Gain
HFE(3)
HFE(4)
VCE(sat)
DC Current Gain
DC Current Gain
Collector- Emitter Saturation Voltage
VBE(sat )
ICBO
IEBO
Base-Emitter Saturation Voltage
Collector Cut-off Current
Emitter Cut-off Current
ICES
Collector Cut-off Current
hFE Classification
Max Unit
Test Conditions
I_C=100 A,I_E=0
I_C=1mA, I_B=0
I_E=100 A I_C=0
V_CE=1V, I_C=1mA
V_CE=1V, I_C=100mA
V_CE=1V, I_C=300mA
V_CE=1V, I_C=500mA
I_C=600mA, I_B=20mA
I_C=600mA, I_B=20mA
V_CB=35V, I_E=0
V_EB=6V, I_C=0
V_CE=20V, V_EB=0
B
C
D