HM13003 Datasheet, PDF (1/2 Pages) SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD – NPN SILICON TRANSISTOR

Shantou Huashan Electronic Devices Co.,Ltd.
NPN SILICON TRANSISTOR
HM13003
█ HIGH VOLTAGE SWITCH MODE APPLICICATIONS
High Speed Switching. Suitable for Switching Regulator and Montor Control
█ ABSOLUTE MAXIMUM RATINGS（T_a=25℃）
T_stg——Storage Temperature………………………… -65~150℃
T_j——Junction Temperature…………………………………150℃
P_C——Collector Dissipation…………………………………40W
V_CBO——Collector-Base Voltage………………………………700V
V_CEO——Collector-Emitter Voltage……………………………400V
V_EBO——Emitter-Base Voltage………………………………9V
I——_CCollector Current……………………………………1.5A
IB——Base Curren………………………………………………0.75A
TO-126ML
1―Emitter，E
2―Collector，C
3― Base，B
█ ELECTRICAL CHARACTERISTICS（T_a=25℃）
Symbol
Characteristics
Min Typ Max Unit
Test Conditions
BVCEO Collector-Emitter Breakdown Voltage
400
IEBO Emitter-Base Cut-off Current
HFE1 DC Current Gain
10
HFE2 DC Current Gain
5
VCE(sat)1 Collector- Emitter Saturation Voltage
VCE(sat)2 Collector- Emitter Saturation Voltage
VCE(sat)3 Collector- Emitter Saturation Voltage
VBE(sat)1 Base-Emitter Saturation Voltage
VBE(sat)2 Base-Emitter Saturation Voltage
fT
Current Gain-Bandwidth Product
4
tON Turn On Time
V I_C=5mA, IB=0
10 μA V_EB=9V, I_C=0
40
V_CE=5V, I_C=0.5A
V_CE=2V, I_C=1A
0.5 V I_C=0.5A, I_B=0.1A
1 V I_C=1A, I_B=0.25A
3 V I_C=1.5A, I_B=0.5A
1 V I_C=0.5A, IB=0.1A
1.2 V I_C=1A, IB=0.25A
MHz VCE=10V,IC=0.1A
1.1 ^μs
V_CC=125V, I_C=1A,
tSTG Storage Time
tF
Fall Time
4.0 μs
0.7 μs
I_B1=0.2A,I_B2=-0.2A
RL=125Ω
█ hFE Classification
H1
H2
H3
H4
H5
10-16
14-21
19-26
24-31
29-40