HJP2045CT Datasheet, PDF (1/2 Pages) SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD – 20A SCHOTTKY BARREIER RECTIFIER

Shantou Huashan Electronic Devices Co.,Ltd.
HJP2045CT
20A SCHOTTKY BARREIER RECTIFIER
█ Features
„ Schottky Barrier Chip
„ Guard Ring Die Construction for Transient Protection
„ Low Power Loss,High Efficiency
„ High Surge Capability
„ High Current Capability and Low Forward Voltage Drop
„ For Use in Low Voltage,High Frequency Inverters,Free Wheelings
,and Polarity Protection Applications
█ Package
TO-220
1―Pin A1
2―Pin K
3―Pin A2
█ Maximum Ratings
„ T_stg——Storage Temperature……………………………………-65~150℃
„ T_j——Operating Temperature…………………………………-65~150℃
„ V_RRM——Peak Repetitive Reverse Voltage……………………………45V
„ V_RWM —— Working Peak Reverse Voltage………………………… 45V
„ V_R——DC Blocking Voltage……………………………………………45V
„ V_R(RMS) ——RMS Reverse Voltage…………………………………31.5V
„ I_F（_AV）——Average Recified Output Current@T_c=95℃……………………Double Dies 20A
‹ (Note 1)
……………………Single Die 10A
„ I_FSM——Non-Repetitive Peak Forward Surge Curren（t Single Wafer，60HZ）…………200A
█ Electrical Characteristic^@Ta^{=25℃unless otherwise specified}
Single phase,half wave,60Hz,resistive or inductive load.
For capacitive load,derate current by 20%.
Characteristic
Forward Voltage Drop
Peak Reverse Current
at Rated DC Blocking Voltage
Symbol
V_FM
I_RM
Typical Junction Capacitance(Note 2)
Cj
Typical Thermal Resistance Junction to Case(Note 1)
R_th-j
Notes:1、Thermal resistance junction to case mounted on heatsink.
2、Measured at 1.0 MHz and Applied Reverse Voltage of 4.0V DC.
Min Max Unit
Condition
0.55 V
I_F=10A,T_C=25℃
1.0
50
mA
V_R=V_RRM T_C=25℃
T_C=100℃
1100 pF
2.8 ℃/W