HJP20100CT Datasheet, PDF (1/2 Pages) SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD – 20A HIGH VOLTAGE SCHOTTKY BARREIER RECTIFIER

Shantou Huashan Electronic Devices Co.,Ltd.
HJP20100CT
20A HIGH VOLTAGE SCHOTTKY BARREIER RECTIFIER
█ Features
„ Schottky Barrier Chip
„ Guard Ring Die Construction for Transient Protection
„ Low Power Loss,High Efficiency
„ High Surge Capability
„ High Current Capability and Low Forward Voltage Drop
„ For Use in Low Voltage,High Frequency Inverters,Free Wheelings
,and Polarity Protection Applications
█ Package
TO-220
1―Pin A1
2―Pin K
3―Pin A2
█ Maximum Ratings
„ T_stg——Storage Temperature………………………………… -65~150℃
„ T_j——Operating Temperature…………………………………-65~150℃
„ V_RRM——Peak Repetitive Reverse Voltage…………………………100V
„ V_RWM —— Working Peak Reverse Voltage……………………… 100V
„ V_R——DC Blocking Voltage…………………………………………100V
„ V_R(RMS) ——RMS Reverse Voltage………………………………… 70V
„ I_F（_AV）——Average Recified Output Current@T_c=125℃…………………Double Dies 20A
‹ (Note 1)
…………………Single Die 10A
„ I_FSM——Non-Repetitive Peak Forward Surge Current（Single Die，60HZ）………150A
█ Electrical Chatacteristic@T_a=25℃unless otherwise specified
Single phase,half wave,60Hz,resistive or inductive load.
For capacitive load,derate current by 20%.
Characteristic
Forward Voltage Drop
Peak Reverse Current
at Rated DC Blocking Voltage
Symbol Min
V_FM
I_RM
Max
0.75
0.85
0.85
0.95
0.15
150
Unit
Condition
I_F=10A,T_C=125℃
V
I_F=10A,T_C=25℃
I_F=20A,T_C=125℃
I_F=20A,T_C=25℃
mA
V_R = V_RRM T_C=25℃
T_C=125℃
Typical Junction Capacitance(Note 2)
Cj
Typical Thermal Resistance Junction to Case(Note 1) R_th-j
1000 pF
2.0 ℃/W
Voltage Rate Of Change
dV/dt
10000 V/s
Notes:1、Thermal resistance junction to case mounted on heatsink.
2、Measured at 1.0 MHz and Applied Reverse Voltage of 4.0V DC.