HGH25N120A Datasheet, PDF (1/6 Pages) SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD – N-Channel Enhancement Insulated Gate Bipolar Transistor

汕头华汕电子器件有限公司
N-Channel Enhancement Insulated Gate Bipolar Transistor
HGH25N120A
█ Applications
• Induction heating and Microwave oven
• Soft switching applications
█ Features
TO-3P
• Low saturation voltage, Vce(on)(typ)=2.1V@Vge=15V
• High input impedance
• Field stop trench technology offer superior
conduction and switching performances,
• High speed switching
█ Absolute Maximum Ratings
1―Gate，G
2―Collector，C
3―Emitter，E
Symbol
VCES
VGES
IC
Description
Collector to Emitter Voltage
Gate to Emitter Voltage
Collector Current（TC = 25℃）
Collector Current（TC = 100℃）
Ratings
1200
±30
50
25
Units
V
V
A
A
ICM (1) Pulsed Collector Current
80
A
IF
Diode continuous Forward current
（TC = 100℃）
15
A
Maximum Power Dissipation（TC =
PD
25℃）
Maximum Power Dissipation（TC =
100℃）
200
80
W
W
TJ
Operating Junction
Temperature
-55～+150 ℃
Tstg ^{Storage Temperature Range} -55～+150 ℃
Maximum Lead Temp. for soldering
TL
Purposes, 1/8” from case for 5
300
℃
seconds
Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature.
█ Thermal Characteristics
Symbol
Parameter
Typ.
RθJC(IGBT) Thermal Resistance, Junction to Case
RθJC(Diode) Thermal Resistance, Junction to Case
RθJA
Thermal Resistance, Junction to Ambient
Max. Units
0.44 ℃/W
2.24 ℃/W
40
℃/W