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| HFU1N60 Datasheet, PDF (1/5 Pages) SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD – N-Channel MOSFET | |||
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Shantou Huashan Electronic Devices Co.,Ltd.
APPLICATIONSL
high-Speed Switching.
ABSOLUTE MAXIMUM RATINGS Ta=25
Tstg Storage Temperature
Tj Operating Junction Temperature
PD
Allowable Power Dissipation Tc=25
VDSS
Drain-Source Voltage
VGSS
Gate-Source Voltage
ID
Drain Current Tc=25
IDM
Drain Current Pulsed
5 5 ~1 5 0
150
28W
600V
±30V
1A
4A
N-Channel MOSFET
HFU1N60
TO-251
1G
2D
3S
ELECTRICAL CHARACTERISTICS Ta=25
Symbol
Characteristics
Min Typ
BVDSS Drain-Source Breakdown Voltage 600
IDSS Zero Gate Voltage Drain Current
IGSS Gate âSource Leakage Current
VGS(th) Gate Threshold Voltage
2.5
RDS(on)
gFS
Ciss
Static Drain-Source On-Resistance
Forward Transconductance
Input Capacitance
Coss Output Capacitance
19
Crss Reverse Transfer Capacitance
3.5
td(on) Turn - On Delay Time
7
tr Rise Time
21
td(off) Turn - Off Delay Time
13
tf
Fall Time
27
Qg Total Gate Charge
4.8
Qgs GateâSource Charge
0.7
Qgd GateâDrain Charge
2.7
Is Continuous Source Current
VSD Diode Forward Voltage
Rth j-c
Thermal Resistance
Junction-to-Case
*Pulse Test Pulse Width 300 s Duty Cycle 2%
Max Unit
Test Conditions
V ID=250 A ,VGS=0V
VDS =600V VGS=0
100
VGS= 30V , VDS =0V
4.5 V VDS = VGS , ID =250 A
? VGS=10V, ID =0.5A
S VDS = 40V , ID =0.5A*
pF
25 pF
VDS =25V, VGS=0,f=1
4.5 pF
24 nS
52
nS
VDD =300V,ID =1.1A
36 nS
RG= 25
*
64 nS
6.2 nC
nC
VDS =480V
nC
IS =0.5A , VGS=0
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