HFP75N08 Datasheet, PDF (1/5 Pages) SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD – N-Channel MOSFET

Shantou Huashan Electronic Devices Co.,Ltd.
APPLICATIONSL
Low Voltage high-Speed Switching.
ABSOLUTE MAXIMUM RATINGS T_a=25
T_stg
T_j
P_D
V_DSS
V_GSS
I_D
Storage Temperature
Operating Junction Temperature
Allowable Power Dissipation T_c=25
Drain-Source Voltage
Gate-Source Voltage
Drain Current T_c=25
-55~175
150
173W
80V
±20V
75A
N-Channel MOSFET
HFP75N08
TO-220
1G
2D
3S
ELECTRICAL CHARACTERISTICS T_a=25
Symbol
Characteristics
Min Typ Max Unit
Test Conditions
BV_DSS Drain-Source Breakdown Voltage 80
I_DSS Zero Gate Voltage Drain Current
I_GSS
V_GS(th)
R_DS(on)
Ciss
Gate –Source Leakage Current
Gate Threshold Voltage
Static Drain-Source On-Resistance
Input Capacitance
2.0
0.011
2600
Coss ^{Output Capacitance}
940
Crss ^{Reverse Transfer Capacitance}
210
t_d(on) Turn - On Delay Time
30
tr Rise Time
225
t_d(off) Turn - Off Delay Time
165
t_f
Fall Time
155
Qg Total Gate Charge
80
Qgs Gate–Source Charge
15
Qgd Gate–Drain Charge
32
Is Continuous Source Current
V_SD Diode Forward Voltage
Rth j-c
Thermal Resistance
Junction-to-Case
*Pulse Test Pulse Width 300 s Duty Cycle 2%
10
100
4.0
0.014
3380
1220
275
70
460
340
320
105
75
1.5
0.87
V I_D=250 A ,V_GS=0V
A V_DS = 80V V_GS=0
nA V_GS= 20V , V_DS =0V
V V_DS = V_GS , I_D =250 A
Ω V_GS=10V, I_D =37.5A
pF
pF
V_DS =25V, V_GS=0,f=1MHz
pF
nS
nS
V_DD =40V, I_D =75A
nS _{RG= 25 *}
nS
nC
V_DS =48V
nC
VGS=10V
nC
ID=50A*
A
V I_S =75A , V_GS=0
/W