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HFP730 Datasheet, PDF (1/6 Pages) SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD – N-Channel Enhancement Mode Field Effect Transistor | |||
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Shantou Huashan Electronic Devices Co.,Ltd.
HFP730
N-Channel Enhancement Mode Field Effect Transistor
â General Description
these power MOSFETs is designed for high voltage, high speed power
switching applications such as switching regulators, converters,
solenoid and relay drivers. And DC-DC&DC-AC Converters for
Telecom,Industrial and Consumer Environment
â Features
⢠5.5A, 400V, RDS(on) <1.0â¦@VGS = 10 V
⢠Fast switching
⢠100% avalanche tested
⢠Improved dv/dt capability
⢠Equivalent Type:IRF730
â Maximum Ratingsï¼Ta=25â unless otherwise specifiedï¼
TO-220
1- G 2-D 3-S
TstgââStorage Temperature ------------------------------------------------------ -55~150â
Tj ââOperating Junction Temperature -------------------------------------------------- 150â
VDSS ââ Drain-Source Voltage ----------------------------------------------------------400V
VDGR ââ Drain-Gate Voltage (RGS=20kΩ) -------------------------------------------------------- 400V
VGSS ââ Gate-Source Voltage ------------------------------------------------------------------------ ±20V
ID ââ Drain Current (Continuous) ------------------------------------------------------------------- 5.5A
PD ââ Maximum Power Dissipation ------------------------------------------------------------- 73W
IAR ââ Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max, d < 1%) ---------------------------------------------------- 5.5 A
EASââ Single Pulse Avalanche Energy
(starting Tj = 25â, ID = IAR, VDD = 50 V) --------------------------------------------------- 330 mJ
EARââ Repetitive Avalanche Energy(pulse width limited by Tj max, d < 1%) ---------------- 7.3mJ
â Thermal Characteristics
Symbol
Rthj-case
Rthj-amb
Rth c-s
Items
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Thermal Resistance Case-sink
TO-220
Max 1.71
Max 62.5
Typ 0.5
Unit
â/W
â/W
â/W
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