HFP640 Datasheet, PDF (1/6 Pages) SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD – N-Channel Enhancement Mode Field Effect Transistor

Shantou Huashan Electronic Devices Co.,Ltd.
HFP640
N-Channel Enhancement Mode Field Effect Transistor
█ General Description
These power MOSFETs is designed for high voltage, high speed power
switching applications such as switching regulators, converters,
solenoid and relay drivers. And DC-DC&DC-AC Converters for
Telecom,Industrial and Consumer Environment
TO-220
█ Features
1- G 2-D 3-S
• 18A,200V,R_DS(on) <0.18Ω@V_GS =10 V
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• Equivalent Type:IRF640
█ Maximum Ratings（Ta=25℃ unless otherwise specified）
T_stg——Storage Temperature ------------------------------------------------------ -55~150℃
T_j ——Operating Junction Temperature -------------------------------------------------- 150℃
V_DSS —— Drain-Source Voltage ---------------------------------------------------------- 200V
V_DGR —— Drain-Gate Voltage (R_GS=20kΩ) ------------------------------------------------------------ 200V
V_GSS —— Gate-Source Voltage ------------------------------------------------------------------------ ±20V
I_D —— Drain Current (Continuous) ------------------------------------------------------------------- 18A
P_D —— Maximum Power Dissipation ------------------------------------------------------------- 125W
I_AR —— Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max, d < 1%) ------------------------------------------------------ 18A
E_AS—— Single Pulse Avalanche Energy
(starting Tj = 25℃, I_D = I_AR, V_DD = 50 V) --------------------------------------------------- 320mJ
E_AR—— Repetitive Avalanche Energy(pulse width limited by Tj max, d < 1%) ---------------- 13.4mJ
█ Thermal Characteristics
Symbol
Rthj-case
Rthj-amb
Rth c-s
Items
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Thermal Resistance Case-sink
TO-220
Max 1.0
Max 62.5
Typ 0.5
Unit
℃/W
℃/W
℃/W