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| HFP630 Datasheet, PDF (1/5 Pages) SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD – N-Channel MOSFET | |||
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Shantou Huashan Electronic Devices Co.,Ltd.
N-Channel MOSFET
HFP630
APPLICATIONSL
High Voltage High-Speed Switching.
ABSOLUTE MAXIMUM RATINGS Ta=25
Tstg Storage Temperature
Tj Operating Junction Temperature
PD
Allowable Power Dissipation Tc=25
VDSS
Drain-Source Voltage
VDGR
Drain-Gate Voltage (RGS=1M )
VGSS
Gate-Source Voltage
ID
*Drain Current Tc=25
* Drain current limited by maximumjunction temperature
5 5 ~1 5 0
150
72W
200V
500V
±30V
9.0A
ELECTRICAL CHARACTERISTICS Ta=25
TO-220
1G
2D
3S
Symbol
Characteristics
Min Typ
BVDSS Drain-Source Breakdown Voltage 200
IDSS Zero Gate Voltage Drain Current
IGSS Gate âSource Leakage Current
VGS(th) Gate Threshold Voltage
2.0
RDS(on) Static Drain-Source On-Resistance
gfs Forward Transconductance
Ciss Input Capacitance
Coss Output Capacitance
85
Crss Reverse Transfer Capacitance
22
td(on) Turn - On Delay Time
11
tr Rise Time
70
td(off) Turn - Off Delay Time
60
tf
Fall Time
65
Qg Total Gate Charge
22
Qgs GateâSource Charge
3.6
Qgd GateâDrain Charge
10.2
Is Continuous Source Current
VSD Diode Forward Voltage
*Pulse Test Pulse Width 300 s Duty Cycle 2%
Max Unit
Test Conditions
V ID=250 A ,VGS=0V
VDS =200V VGS=0
100
VGS= 30V , VDS =0V
4.0 V VDS = VGS , ID =250 A
? VGS=10V, ID =4.5A
S VDS = 40V , ID =4.5A *
pF
110 pF
29 pF
30 nS
150 nS
130 nS
140 nS
29 nC
VDS =25V, VGS=0,f=1
VDD =100V,
ID =9A
RG= 25 *
nC
nC
IS =9.0A , VGS=0
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