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HFP60N06 Datasheet, PDF (1/6 Pages) SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD – N-Channel Enhancement Mode Field Effect Transistor | |||
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Shantou Huashan Electronic Devices Co.,Ltd.
HFP60N06
N-Channel Enhancement Mode Field Effect Transistor
â Applications
⢠Servo motor control.
⢠Power MOSFET gate drivers.
⢠DC/DC converters
⢠Other switching applications.
â Features
⢠60A, 60V(See Note), RDS(on) <11.5mVâ¦@VGS = 10 V
⢠Fast switching
⢠100% avalanche tested
⢠Minimize input capacitance and gate charge
⢠Exceptional dv/dt capability
TO-220
1- G 2-D 3-S
â Maximum Ratingsï¼Ta=25â unless otherwise specifiedï¼
TstgââStorage Temperature ------------------------------------------------------ -55~165â
Tj ââOperating Junction Temperature -------------------------------------------------- 150â
VDSS ââ Drain-Source Voltage ----------------------------------------------------------60V
VGSS ââ Gate-Source Voltage --------------------------------------------------------------------------- ±20V
ID ââ Drain Current (Continuous)(Tc=25â)----------------------------------------------------------- 60A
IDM ââ Pulsed Drain Current (Note 1)----------------------------------------------------------------- 240A
PD ââ Maximum Power Dissipation (Tc=25â)------------------------------------------------------ 150W
EASââ Pulsed Avalanche Energy (Note 2) ------------------------------------------------------------ 550mJ
â Thermal Characteristics
Symbol
Rthj-case
Rthj-amb
Items
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
TO-220
Max 1.13
Max 63
Unit
â/W
â/W
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