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HFP50N06V Datasheet, PDF (1/6 Pages) SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD – N-Channel Enhancement Mode Field Effect Transistor | |||
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Shantou Huashan Electronic Devices Co.,Ltd.
HFP50N06V
N-Channel Enhancement Mode Field Effect Transistor
â Applications
⢠Servo motor control.
⢠DC/DC converters
⢠Low Power Switching mode power appliances.
⢠Other switching applications.
â Features
⢠50A, 60V(See Note), RDS(on) <28mVâ¦@VGS = 10 V
⢠Fast switching
⢠100% avalanche tested
⢠Minimize input capacitance and gate charge
⢠Equivalent Type:ME50N06
TO-220
1- G 2-D 3-S
â Maximum Ratingsï¼Ta=25â unless otherwise specifiedï¼
TstgââStorage Temperature ------------------------------------------------------ -55~150â
Tj ââOperating Junction Temperature -------------------------------------------------- 150â
VDSS ââ Drain-Source Voltage ----------------------------------------------------------60V
VGSS ââ Gate-Source Voltage --------------------------------------------------------------------------- ±25V
ID ââ Drain Current (Continuous)(Tc=25â)----------------------------------------------------------- 50A
IDM ââ Pulsed Drain Current (Note 1)----------------------------------------------------------------- 100A
PD ââ Maximum Power Dissipation (Tc=25â)------------------------------------------------------ 60W
â Thermal Characteristics
Symbol
Rthj-case
Rthj-amb
Items
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
TO-220
Max 2.0
Max 62.5
Unit
â/W
â/W
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