HFP50N06 Datasheet, PDF (1/5 Pages) SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD – N-Channel MOSFET

Shantou Huashan Electronic Devices Co.,Ltd.
APPLICATIONSL
Low Voltage high-Speed Switching.
ABSOLUTE MAXIMUM RATINGS T_a=25
T_stg
T_j
P_D
V_DSS
V_GSS
I_D
Storage Temperature
Operating Junction Temperature
Allowable Power Dissipation T_c=25
Drain-Source Voltage
Gate-Source Voltage
Drain Current T_c=25
-55~175
150
130W
60V
±20V
50A
N-Channel MOSFET
HFP50N06
TO-220
1G
2D
3S
ELECTRICAL CHARACTERISTICS T_a=25
Symbol
Characteristics
Min Typ Max Unit
Test Conditions
BV_DSS Drain-Source Breakdown Voltage 60
I_DSS Zero Gate Voltage Drain Current
I_GSS
V_GS(th)
R_DS(on)
Ciss
Gate –Source Leakage Current
Gate Threshold Voltage
Static Drain-Source On-Resistance
Input Capacitance
2.0
0.018
880
Coss ^{Output Capacitance}
430
Crss ^{Reverse Transfer Capacitance}
110
t_d(on) Turn - On Delay Time
60
tr Rise Time
185
t_d(off) Turn - Off Delay Time
75
t_f
Fall Time
60
Qg Total Gate Charge
39
Qgs Gate–Source Charge
9.5
Qgd Gate–Drain Charge
13
Is Continuous Source Current
V_SD Diode Forward Voltage
Rth j-c
Thermal Resistance
Junction-to-Case
*Pulse Test Pulse Width 300 s Duty Cycle 2%
1
100
4.0
0.023
1140
560
140
130
380
160
130
45
50
1.5
1.15
V I_D=250 A ,V_GS=0V
A V_DS = 60V V_GS=0
nA V_GS= 20V , V_DS =0V
V V_DS = V_GS , I_D =250 A
Ω V_GS=10V, I_D =25A
pF
pF
V_DS =25V, V_GS=0,f=1MHz
pF
nS
nS
V_DD =30V, I_D =25A
nS _{RG= 50 *}
nS
nC
V_DS =48V
nC
VGS=10V
nC
ID=50A*
A
V I_S =50A , V_GS=0
/W