HFP4N60 Datasheet, PDF (1/5 Pages) SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD – N-Channel MOSFET

Shantou Huashan Electronic Devices Co.,Ltd.
APPLICATIONSL
High-Speed Switching.
ABSOLUTE MAXIMUM RATINGS T_a=25
T_stg Storage Temperature
T_j Operating Junction Temperature
P_D
Allowable Power Dissipation T_c=25
V_DSS
Drain-Source Voltage
V_GSS
Gate-Source Voltage
I_D
Drain Current T_c=25
5 5 ~1 5 0
150
100W
600V
±30V
4.0A
N-Channel MOSFET
HFP4N60
TO-220
1G
2D
3S
ELECTRICAL CHARACTERISTICS T_a=25
Symbol
Characteristics
Min Typ
BV_DSS Drain-Source Breakdown Voltage 600
I_DSS Zero Gate Voltage Drain Current
I_GSS Gate –Source Leakage Current
V_GS(th) Gate Threshold Voltage
2.0
R_DS(on) Static Drain-Source On-Resistance
Ciss Input Capacitance
Coss ^{Output Capacitance}
65
Crss ^{Reverse Transfer Capacitance}
14
t_d(on) Turn - On Delay Time
20
tr Rise Time
55
t_d(off) Turn - Off Delay Time
70
t_f
Fall Time
55
Qg Total Gate Charge
22
Qgs Gate–Source Charge
4.8
Qgd Gate–Drain Charge
8.5
Is Continuous Source Current
V_SD
Rth j-c
Diode Forward Voltage
Thermal Resistance
Junction-to-Case
*Pulse Test Pulse Width 300 s Duty Cycle 2%
Max Unit
Test Conditions
V I_D=250 A ,V_GS=0V
V_DS =600V V_GS=0
100
V_GS= 30V , V_DS =0V
4.0 V V_DS = V_GS , I_D =250 A
? V_GS=10V, I_D =2.0A
pF
85 pF
V_DS =25V, V_GS=0,f=1
19 pF
50 nS
120 nS
150 nS
120 nS
29 nC
V_DD =300V, I_D =4.0A
R_G= 25 *
V_DS =480V
nC
nC
I_S =4.0A , V_GS=0