HFP45N06 Datasheet, PDF (1/5 Pages) SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD – N-Channel MOSFET

Shantou Huashan Electronic Devices Co.,Ltd.
APPLICATIONSL
Low Voltage high-Speed Switching.
ABSOLUTE MAXIMUM RATINGS T_a=25
T _stg
T_j
P_D
V_DSS
V_GSS
I_D
Storage Temperature
Operating Junction Temperature
Allowable Power Dissipation T_c=25
Drain-Source Voltage
Gate-Source Voltage
Drain Current T_c=25
55~175
150
131W
60V
±20V
45A
N-Channel MOSFET
HFP45N06
TO-220
1G
2D
3S
ELECTRICAL CHARACTERISTICS T_a=25
Symbol
Characteristics
Min Typ
BV_DSS Drain-Source Breakdown Voltage
I_DSS Zero Gate Voltage Drain Current
I_GSS
V_GS(th)
R_DS(on)
Ciss
Gate –Source Leakage Current
Gate Threshold Voltage
*Static Drain-Source On-Resistance
Input Capacitance
Coss
Crss
tON
Output Capacitance
Reverse Transfer Capacitance
Turn-On Time
t_d(on) Turn - On Delay Time
tr Rise Time
t_d(off) Turn - Off Delay Time
t_f Fall Time
tOFF Turn Off Time
Qg Total Gate Charge
Qg(10) Gate Charge at 10V
Qgd Threshold Gate Charge
V_SD Diode Forward Voltage
Rth _{Thermal Resistance}
j-c Junction-to-Case
*Pulse Test Pulse Width 300 s Duty Cycle 2%
Max Unit
Test Conditions
V I_D=250 A ,V_GS=0V
V_DS = 60V V_GS=0
V_GS= 20V , V_DS =0V
V V_DS = V_GS , I_D =250 A
? V_GS=10V, I_D =45A
pF
pF
V_DS =25V, V_GS=0,f=1
pF
nS
nS
nS
V_DD =30V, I_D =45A
RL=0.667 , V_GS=10V
nS
R_G= 3.6
nS
nS
nC
V_DS =48V
nC
1.07
nC
I_SD =45A