HFP13N10 Datasheet, PDF (1/7 Pages) SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD – N-Channel Enhancement Mode Field Effect Transistor

Shantou Huashan Electronic Devices Co.,Ltd.
HFP13N10
N-Channel Enhancement Mode Field Effect Transistor
█ General Description
These are N-Channel enhancement mode silicon gate power field effect transistors.
They are advanced power MOSFETs designed, this advanced technology has been
especially tailored to minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche and commutation
mode . These devices are well suited for low voltage applications such as audio
amplifier, high efficiency switching DC/DC converters, and DC motor control.
█ Features
• 13A, 100V, R_DS(on) <0.10Ω@V_GS = 10 V
• High density cell design for ultra low Rdson
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
█ Maximum Ratings（Ta=25℃ unless otherwise specified）
TO-220
1- G 2- D 3- S
T_stg——Storage Temperature ------------------------------------------------------ -55~150℃
T_j ——Operating Junction Temperature -------------------------------------------------- 150℃
V_DSS —— Drain-Source Voltage ----------------------------------------------------------100V
V_GSS —— Gate-Source Voltage --------------------------------------------------------------------------- ±20V
I_D —— Drain Current (Continuous)(T_c=25℃)----------------------------------------------------------- 13A
I_DM —— Pulsed Drain Current (Note 1) ----------------------------------------------------------------- 52A
P_D —— Maximum Power Dissipation (T_c=25℃)------------------------------------------------------ 65W
Derate Above 25℃ ------------------------------------------------------------------------- 0.43W/℃
E_AS—— Pulsed Avalanche Energy (Note 2) ----------------------------------------------------------- 250mJ
I_AR—— Avalanche Current (Note 1) ----------------------------------------------------------------------- 13A
E_AR —— Repetitive Avalanche Energy (Note 1) ------------------------------------------------------ 6.5mJ
dv/dt —— Peak Diode Recovery dv/dt (Note 3) -------------------------------------------------------6V/ns
█ Thermal Characteristics
Symbol
Rthj-case
Rthj-amb
Items
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
TO-220
Max 2.3
Max 62.5
Unit
℃/W
℃/W